EGF1BHE3_A/I - Vishay Semiconductor Diodes Division

Número de pieza	EGF1BHE3_A/I
Estado de la pieza	Active
Tipo de diodo	Standard
Voltaje - DC Reverse (Vr) (Max)	100V
Corriente - promedio rectificado (Io)	1A
Voltaje - Adelante (Vf) (Máx) @ Si	1V @ 1A
Velocidad	Fast Recovery =< 500ns, > 200mA (Io)
Tiempo de recuperación inversa (trr)	50ns
Current - Reverse Leakage @ Vr	1µA @ 100V
Capacitancia @ Vr, F	15pF @ 4V, 1MHz
Tipo de montaje	Surface Mount
Paquete / caja	DO-214BA
Paquete de dispositivo del proveedor	DO-214BA (GF1)
Temperatura de funcionamiento - unión	-65°C ~ 175°C
Peso	-
País de origen	-

Número de pieza	Fabricantes	Descripción	Ver
EGF10A	ZOWIE	SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER	Detalles
EGF10B	ZOWIE	SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER	Detalles
EGF10D	ZOWIE	SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER	Detalles
EGF10F	ZOWIE	SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER	Detalles
EGF10G	ZOWIE	SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER	Detalles
EGF10J	ZOWIE	SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER	Detalles
EGF10K	ZOWIE	SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER	Detalles
EGF10M	ZOWIE	SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER	Detalles
EGF15A	ZOWIE	SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER	Detalles
EGF15B	ZOWIE	SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER	Detalles