| Número de pieza | BYV32-100-E3/45 |
|---|---|
| Estado de la pieza | Active |
| Configuración de Diodo | 1 Pair Common Cathode |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 100V |
| Corriente - Rectificado promedio (Io) (por diodo) | 18A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.15V @ 20A |
| Velocidad | Fast Recovery =< 500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 25ns |
| Current - Reverse Leakage @ Vr | 10µA @ 100V |
| Temperatura de funcionamiento - unión | -65°C ~ 150°C |
| Tipo de montaje | Through Hole |
| Paquete / caja | TO-220-3 |
| Paquete de dispositivo del proveedor | TO-220AB |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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BYV32 | VISHAY | Dual Ultrafast Rectifiers | Detalles |
|
BYV32-100 | GE | FAST EFFICIENT PLASTIC RECTIFIER | Detalles |
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BYV32-100-E3/45 | Vishay Semiconductor Diodes Division | DIODE ARRAY GP 100V 18A TO220AB | Detalles |
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BYV32-100-XM | SEME-LAB | HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS | Detalles |
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BYV32-100-XTM | SEME-LAB | HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS | Detalles |
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BYV32-100HE3/45 | Vishay Semiconductor Diodes Division | DIODE ARRAY GP 100V 18A TO220AB | Detalles |
|
BYV32-100M | SEME-LAB | HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS | Detalles |
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BYV32-150 | GE | FAST EFFICIENT PLASTIC RECTIFIER | Detalles |
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BYV32-150-E3/45 | Vishay Semiconductor Diodes Division | DIODE ARRAY GP 150V 18A TO220AB | Detalles |
|
BYV32-150-XM | SEME-LAB | HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS | Detalles |
