| Número de pieza | AS3BGHM3_A/I |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Avalanche |
| Voltaje - DC Reverse (Vr) (Max) | 400V |
| Corriente - promedio rectificado (Io) | 3A (DC) |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.05V @ 3A |
| Velocidad | Fast Recovery =< 500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | - |
| Current - Reverse Leakage @ Vr | 20µA @ 600V |
| Capacitancia @ Vr, F | 40pF @ 4V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | DO-214AA, SMB |
| Paquete de dispositivo del proveedor | DO-214AA (SMB) |
| Temperatura de funcionamiento - unión | -55°C ~ 175°C |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
|
AS3BD-M3/H | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 3A DO214AA | Detalles |
|
AS3BD-M3/I | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 3A DO214AA | Detalles |
|
AS3BDHM3_A/H | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 3A DO214AA | Detalles |
|
AS3BDHM3_A/I | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 3A DO214AA | Detalles |
|
AS3BG-M3/H | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 400V 3A DO214AA | Detalles |
|
AS3BG-M3/I | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 400V 3A DO214AA | Detalles |
|
AS3BGHM3_A/H | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 400V 3A DO214AA | Detalles |
|
AS3BGHM3_A/I | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 400V 3A DO214AA | Detalles |
 |
AS3BJ-M3/52T | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 3A DO214AA | Detalles |
|
AS3BJ-M3/5BT | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 3A DO214AA | Detalles |
