3N259-E4/51 - Vishay Semiconductor Diodes Division

Número de pieza	3N259-E4/51
Estado de la pieza	Last Time Buy
Tipo de diodo	Single Phase
Tecnología	Standard
Voltaje - Pico Inverso (Máx)	1000V
Corriente - promedio rectificado (Io)	2A
Voltaje - Adelante (Vf) (Máx) @ Si	1.1V @ 3.14A
Current - Reverse Leakage @ Vr	5µA @ 1000V
Temperatura de funcionamiento	-55°C ~ 165°C (TJ)
Tipo de montaje	Through Hole
Paquete / caja	4-SIP, KBPM
Paquete de dispositivo del proveedor	KBPM
Peso	-
País de origen	-

Número de pieza	Fabricantes	Descripción	Ver
3N250	Fairchild/ON Semiconductor	RECTIFIER BRIDGE 600V 1.5A KBPM	Detalles
3N250-E4/45	Vishay Semiconductor Diodes Division	DIODE BRIDGE 1.5A 600V KBPM	Detalles
3N250-E4/51	Vishay Semiconductor Diodes Division	DIODE BRIDGE 1.5A 600V KBPM	Detalles
3N250-E4/72	Vishay Semiconductor Diodes Division	BRIDGE RECT 1PH 600V 1.5A KBPM	Detalles
3N250-M4/51	Vishay Semiconductor Diodes Division	BRIDGE RECT 1.5A 600V KBPM	Detalles
3N251	Fairchild/ON Semiconductor	RECTIFIER BRIDGE 800V 1.5A KBPM	Detalles
3N251-E4/45	Vishay Semiconductor Diodes Division	DIODE BRIDGE 1.5A 800V KBPM	Detalles
3N251-E4/51	Vishay Semiconductor Diodes Division	DIODE BRIDGE 1.5A 800V KBPM	Detalles
3N251-E4/72	Vishay Semiconductor Diodes Division	BRIDGE RECT 1PH 800V 1.5A KBPM	Detalles
3N251-M4/51	Vishay Semiconductor Diodes Division	BRIDGE RECT 1.5A 800V KBPM	Detalles