1SS417CT,L3F - Toshiba Semiconductor and Storage

Número de pieza	1SS417CT,L3F
Estado de la pieza	Active
Tipo de diodo	Schottky
Voltaje - DC Reverse (Vr) (Max)	40V
Corriente - promedio rectificado (Io)	100mA
Voltaje - Adelante (Vf) (Máx) @ Si	620mV @ 100mA
Velocidad	Small Signal =< 200mA (Io), Any Speed
Tiempo de recuperación inversa (trr)	-
Current - Reverse Leakage @ Vr	5µA @ 40V
Capacitancia @ Vr, F	15pF @ 0V, 1MHz
Tipo de montaje	Surface Mount
Paquete / caja	2-SMD, Flat Lead
Paquete de dispositivo del proveedor	fSC
Temperatura de funcionamiento - unión	125°C (Max)
Peso	-
País de origen	-

Número de pieza	Fabricantes	Descripción	Ver
1SS400	ROHM	1SS400 ROHM SOD-42.. New Original Stocks	Detalles
1SS400 RJG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 200MA SOD523	Detalles
1SS400 RKG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 200MA SOD523	Detalles
1SS400 RSG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 200MA SOD523	Detalles
1SS400(A)	CJ	1SS400(A) CJ SMD or Through Hole New Original Stocks	Detalles
1SS400-G	Comchip Technology	DIODE GEN PURP 80V 100MA SOD523	Detalles
1SS400-GT/R13	COMCHIP	Surface Mount High Speed Switching Diode	Detalles
1SS400-GT/R7	COMCHIP	Surface Mount High Speed Switching Diode	Detalles
1SS400-TP	Micro Commercial Co	DIODE GEN PURP 90V 100MA SOD523	Detalles
1SS400CS	ROHM	Switching diode	Detalles