| Número de pieza | STP9NM60N |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | N-Channel |
| Tecnología | MOSFET (Metal Oxide) |
| Drene a la fuente de voltaje (Vdss) | 600V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 6.5A (Tc) |
| Voltaje de conducción (Rds máx. Encendidos, Rds mínimos activados) | 10V |
| Vgs (th) (Max) @ Id | 4V @ 250µA |
| Carga de puerta (Qg) (Max) @ Vgs | 17.4nC @ 10V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 452pF @ 50V |
| Vgs (Max) | ±25V |
| Característica FET | - |
| Disipación de potencia (Máx) | 70W (Tc) |
| Rds On (Max) @ Id, Vgs | 745 mOhm @ 3.25A, 10V |
| Temperatura de funcionamiento | 150°C (TJ) |
| Tipo de montaje | Through Hole |
| Paquete de dispositivo del proveedor | TO-220AB |
| Paquete / caja | TO-220-3 |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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