| Número de pieza | PD20015-E |
|---|---|
| Estado de la pieza | Active |
| Tipo de transistor | LDMOS |
| Frecuencia | 2GHz |
| Ganancia | 11dB |
| Voltaje - Prueba | 13.6V |
| Valoración actual | 7A |
| Figura de ruido | - |
| Actual - Prueba | 350mA |
| Salida de potencia | 15W |
| Voltaje - Clasificación | 40V |
| Paquete / caja | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
| Paquete de dispositivo del proveedor | PowerSO-10RF (Formed Lead) |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
 |
PD200 | VISHAY | Plate Capacitors with Contoured Rim - Class 1 Ceramic | Detalles |
|
PD20010-E | STMicroelectronics | TRANS RF N-CH FET POWERSO-10RF | Detalles |
.jpg "PD20010S-E") |
PD20010S-E | STMicroelectronics | TRANS RF N-CH FET POWERSO-10RF | Detalles |
|
PD20010STR-E | STMicroelectronics | TRANS N-CH 40V POWERSO-10RF STR | Detalles |
|
PD20010TR-E | STMicroelectronics | TRANS N-CH 40V POWERSO-10RF FORM | Detalles |
|
PD20012 | NIEC | DIODE MODULE 200A/1200 to 1600V | Detalles |
|
PD20015-E | STMicroelectronics | TRANS RF PWR N-CH POWERSO-10RF | Detalles |
 |
PD20015C | STMicroelectronics | FET RF 40V 2GHZ M243 | Detalles |
|
PD20015S-E | STMicroelectronics | TRANS RF N-CH FET POWERSO-10RF | Detalles |
|
PD20016 | NIEC | DIODE MODULE 200A/1200 to 1600V | Detalles |
