| Número de pieza | SICR101200 |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Silicon Carbide Schottky |
| Voltaje - DC Reverse (Vr) (Max) | 1200V |
| Corriente - promedio rectificado (Io) | 10A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.8V @ 10A |
| Velocidad | No Recovery Time > 500mA (Io) |
| Tiempo de recuperación inversa (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 100µA @ 1200V |
| Capacitancia @ Vr, F | 640pF @ 0V, 1MHz |
| Tipo de montaje | Through Hole |
| Paquete / caja | TO-220-2 |
| Paquete de dispositivo del proveedor | TO-220AC |
| Temperatura de funcionamiento - unión | -55°C ~ 175°C |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
|
SICR101200 | SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | Detalles |
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