| Número de pieza | RFN10NS6STL |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 600V |
| Corriente - promedio rectificado (Io) | 10A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.55V @ 10A |
| Velocidad | Fast Recovery =< 500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 10µA @ 600V |
| Capacitancia @ Vr, F | - |
| Tipo de montaje | Surface Mount |
| Paquete / caja | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Paquete de dispositivo del proveedor | LPDS |
| Temperatura de funcionamiento - unión | 150°C (Max) |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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.jpg "RFN10TF6S") |
RFN10TF6S | Rohm Semiconductor | DIODE GEN PURP 600V 10A TO220NFM | Detalles |
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RFN10TF6SFHC9 | Rohm Semiconductor | ROHMS FAST RECOVERY DIODES ARE | Detalles |
