| Número de pieza | APTC90AM60SCTG |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | 2 N-Channel (Half Bridge) |
| Característica FET | Super Junction |
| Drene a la fuente de voltaje (Vdss) | 900V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 59A |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 52A, 10V |
| Vgs (th) (Max) @ Id | 3.5V @ 6mA |
| Carga de puerta (Qg) (Max) @ Vgs | 540nC @ 10V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 13600pF @ 100V |
| Potencia - Max | 462W |
| Temperatura de funcionamiento | -40°C ~ 150°C (TJ) |
| Tipo de montaje | Chassis Mount |
| Paquete / caja | SP4 |
| Paquete de dispositivo del proveedor | SP4 |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
|
APTC90AM602G | Microsemi Corporation | MOSFET 2N-CH 900V 59A SP2 | Detalles |
|
APTC90AM60SCTG | Microsemi Corporation | MOSFET 2N-CH 900V 59A SP4 | Detalles |
|
APTC90AM60T1G | Microsemi Corporation | MOSFET 2N-CH 900V 59A SP1 | Detalles |
|
APTC90DAM60CT1G | Microsemi Corporation | MOSFET N-CH 900V 59A SP1 | Detalles |
 |
APTC90DAM60T1G | Microsemi Corporation | MOSFET N-CH 900V 59A SP1 | Detalles |
|
APTC90DDA12T1G | Microsemi Corporation | MOSFET 2N-CH 900V 30A SP1 | Detalles |
|
APTC90DSK12T1G | Microsemi Corporation | MOSFET 2N-CH 900V 30A SP1 | Detalles |
|
APTC90H12SCTG | Microsemi Corporation | MOSFET 4N-CH 900V 30A SP4 | Detalles |
|
APTC90H12T1G | Microsemi Corporation | MOSFET 4N-CH 900V 30A SP1 | Detalles |
|
APTC90H12T2G | Microsemi Corporation | MOSFET 4N-CH 900V 30A SP2 | Detalles |
