| Número de pieza | 2N7335 |
|---|---|
| Estado de la pieza | Obsolete |
| Tipo de FET | 4 P-Channel |
| Característica FET | Standard |
| Drene a la fuente de voltaje (Vdss) | 100V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 750mA |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 500mA, 10V |
| Vgs (th) (Max) @ Id | 4V @ 250µA |
| Carga de puerta (Qg) (Max) @ Vgs | - |
| Capacitancia de entrada (Ciss) (Max) @ Vds | - |
| Potencia - Max | 1.4W |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Through Hole |
| Paquete / caja | 14-DIP (0.300", 7.62mm) |
| Paquete de dispositivo del proveedor | MO-036AB |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
 |
2N0303 | INFINEON | 2N0303 INFINEON TO-220 New Original Stocks | Detalles |
|
2N03L10 | INFINEON | 2N03L10 INFINEON TO-251 New Original Stocks | Detalles |
|
2N1008 | EXSHINE | alloy-junction germanium transistors | Detalles |
|
2N1008A | EXSHINE | alloy-junction germanium transistors | Detalles |
|
2N1008B | EXSHINE | alloy-junction germanium transistors | Detalles |
|
2N1011 | EXSHINE | germanium transistors | Detalles |
|
2N1016B | Microsemi Corporation | NPN TRANSISTOR | Detalles |
|
2N1016C | Microsemi Corporation | NPN TRANSISTOR | Detalles |
|
2N1016D | Microsemi Corporation | NPN TRANSISTOR | Detalles |
|
2N1057 | EXSHINE | alloy-junction germanium transistors | Detalles |
