| Número de pieza | V10P625AUTO |
|---|---|
| Estado de la pieza | Active |
| Voltios de CA máximos | 625V |
| Voltios de CC máximos | 825V |
| Varistor Voltage (Min) | 900V |
| Varistor Voltage (Typ) | 1kV |
| Varistor Voltage (Max) | 1.1kV |
| Corriente - Surge | 3.5kA |
| Energía | 110J |
| Cantidad de circuitos | 1 |
| Capacitancia @ Frecuencia | 90pF @ 1MHz |
| Temperatura de funcionamiento | -40°C ~ 85°C (TA) |
| Caracteristicas | - |
| Tipo de montaje | Through Hole |
| Paquete / caja | Disc 10mm |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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V10P10 | VISHAY | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier | Detalles |
 |
V10P10-E3/86A | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | Detalles |
|
V10P10-E3/87A | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | Detalles |
|
V10P10-M3/86A | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | Detalles |
|
V10P10-M3/87A | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | Detalles |
|
V10P10HE3/86A | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | Detalles |
|
V10P10HE3/87A | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | Detalles |
|
V10P10HM3/86A | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | Detalles |
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V10P10HM3/87A | VISHAY | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier | Detalles |
|
V10P10HM3_A/H | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 10A TO277A | Detalles |
