| Número de pieza | SPW24N60C3 |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | N-Channel |
| Tecnología | MOSFET (Metal Oxide) |
| Drene a la fuente de voltaje (Vdss) | 650V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 24.3A (Tc) |
| Voltaje de conducción (Rds máx. Encendidos, Rds mínimos activados) | 10V |
| Vgs (th) (Max) @ Id | 3.9V @ 1.2mA |
| Carga de puerta (Qg) (Max) @ Vgs | 135nC @ 10V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 3000pF @ 25V |
| Vgs (Max) | ±20V |
| Característica FET | - |
| Disipación de potencia (Máx) | 240W (Tc) |
| Rds On (Max) @ Id, Vgs | 160 mOhm @ 15.4A, 10V |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Through Hole |
| Paquete de dispositivo del proveedor | PG-TO247-3 |
| Paquete / caja | TO-247-3 |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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SPW20N50S5 | ORIGINAL | SPW20N50S5 ORIGINAL SMD or Through Hole New Original Stocks | Detalles |
|
SPW20N60C3 | Infineon Technologies | MOSFET N-CH 650V 20.7A TO-247 | Detalles |
 |
SPW20N60C3E8177FKSA1 | Infineon Technologies | MOSFET N-CH | Detalles |
|
SPW20N60C3FKSA1 | Infineon Technologies | MOSFET N-CH 650V 20.7A TO-247 | Detalles |
|
SPW20N60CFDFKSA1 | Infineon Technologies | MOSFET N-CH 650V 20.7A TO-247 | Detalles |
|
SPW20N60S5 | INF | SPW20N60S5 INF TO-3P New Original Stocks | Detalles |
|
SPW20N60S5FKSA1 | Infineon Technologies | MOSFET N-CH 600V 20A TO-247 | Detalles |
|
SPW21N50C3 | Infineon Technologies | MOSFET N-CH 560V 21A TO-247 | Detalles |
|
SPW21N50C3FKSA1 | Infineon Technologies | MOSFET N-CH 560V 21A TO-247 | Detalles |
|
SPW24N60C3 | Infineon Technologies | MOSFET N-CH 650V 24.3A TO-247 | Detalles |
