| Número de pieza | IPW60R045CPFKSA1 |
|---|---|
| Estado de la pieza | Not For New Designs |
| Tipo de FET | N-Channel |
| Tecnología | MOSFET (Metal Oxide) |
| Drene a la fuente de voltaje (Vdss) | 650V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 45 mOhm @ 44A, 10V |
| Vgs (th) (Max) @ Id | 3.5V @ 3mA |
| Carga de puerta (Qg) (Max) @ Vgs | 190nC @ 10V |
| Vgs (Max) | ±20V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 6800pF @ 100V |
| Característica FET | - |
| Disipación de potencia (Máx) | 431W (Tc) |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Through Hole |
| Paquete de dispositivo del proveedor | PG-TO247-3 |
| Paquete / caja | TO-247-3 |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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IPW60R017C7XKSA1 | Infineon Technologies | HIGH POWER_NEW | Detalles |
|
IPW60R018CFD7XKSA1 | Infineon Technologies | HIGH POWERNEW | Detalles |
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IPW60R031CFD7XKSA1 | Infineon Technologies | MOSFET N-CH 600V TO247-3 | Detalles |
|
IPW60R037CSFDXKSA1 | Infineon Technologies | HIGH POWERNEW | Detalles |
|
IPW60R037P7XKSA1 | Infineon Technologies | MOSFET N-CH 650V 76A TO247-3 | Detalles |
|
IPW60R040C7XKSA1 | Infineon Technologies | MOSFET N-CH 600V 50A TO247-3 | Detalles |
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IPW60R040CFD7XKSA1 | Infineon Technologies | HIGH POWERNEW | Detalles |
|
IPW60R041C6 | Infineon Technologies | MOSFET N-CH 600V 77.5A TO 247-3 | Detalles |
|
IPW60R041C6FKSA1 | Infineon Technologies | MOSFET N-CH 600V 77.5A TO 247-3 | Detalles |
|
IPW60R041P6FKSA1 | Infineon Technologies | MOSFET N-CH 600V 77.5A TO247-3 | Detalles |
