| Número de pieza | IPG20N04S4L11AATMA1 |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | 2 N-Channel (Dual) |
| Característica FET | Logic Level Gate |
| Drene a la fuente de voltaje (Vdss) | 40V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 20A |
| Rds On (Max) @ Id, Vgs | 11.6 mOhm @ 17A, 10V |
| Vgs (th) (Max) @ Id | 2.2V @ 15µA |
| Carga de puerta (Qg) (Max) @ Vgs | 26nC @ 10V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 1990pF @ 25V |
| Potencia - Max | 41W |
| Temperatura de funcionamiento | -55°C ~ 175°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete / caja | 8-PowerVDFN |
| Paquete de dispositivo del proveedor | PG-TDSON-8-10 |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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IPG20N04S408AATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Detalles |
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IPG20N04S408ATMA1 | Infineon Technologies | MOSFET 2N-CH 40V 20A TDSON-8 | Detalles |
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IPG20N04S409ATMA1 | Infineon Technologies | MOSFET N-CHANNEL_30/40V | Detalles |
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IPG20N04S412AATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Detalles |
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IPG20N04S412ATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Detalles |
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IPG20N04S4L07AATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Detalles |
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IPG20N04S4L07ATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Detalles |
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IPG20N04S4L08AATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Detalles |
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IPG20N04S4L08ATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Detalles |
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IPG20N04S4L11AATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Detalles |
