| Número de pieza | MSRTA6001R |
|---|---|
| Estado de la pieza | Active |
| Configuración de Diodo | - |
| Tipo de diodo | - |
| Voltaje - DC Reverse (Vr) (Max) | 1600V |
| Corriente - Rectificado promedio (Io) (por diodo) | 600A (DC) |
| Voltaje - Adelante (Vf) (Máx) @ Si | - |
| Velocidad | Standard Recovery >500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | - |
| Current - Reverse Leakage @ Vr | - |
| Temperatura de funcionamiento - unión | -55°C ~ 150°C |
| Tipo de montaje | Chassis Mount |
| Paquete / caja | 3-SMD Module |
| Paquete de dispositivo del proveedor | Three Tower |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
|
MSRT100100(A)D | GeneSiC Semiconductor | DIODE GEN 1KV 100A 3 TOWER | Detalles |
|
MSRT100120(A)D | GeneSiC Semiconductor | DIODE GEN 1.2KV 100A 3 TOWER | Detalles |
|
MSRT100140(A)D | GeneSiC Semiconductor | DIODE GEN 1.4KV 100A 3 TOWER | Detalles |
|
MSRT100160(A)D | GeneSiC Semiconductor | DIODE GEN 1.6KV 100A 3 TOWER | Detalles |
|
MSRT10060(A)D | GeneSiC Semiconductor | DIODE GEN PURP 600V 100A 3 TOWER | Detalles |
|
MSRT10080(A)D | GeneSiC Semiconductor | DIODE GEN PURP 800V 100A 3 TOWER | Detalles |
|
MSRT150100(A) | GeneSiC Semiconductor | DIODE MODULE 1KV 150A 3TOWER | Detalles |
|
MSRT150100(A)D | GeneSiC Semiconductor | DIODE GEN 1KV 150A 3 TOWER | Detalles |
|
MSRT150120(A) | GeneSiC Semiconductor | DIODE MODULE 1.2KV 150A 3TOWER | Detalles |
|
MSRT150120(A)D | GeneSiC Semiconductor | DIODE GEN 1.2KV 150A 3 TOWER | Detalles |
