GBL04 - GeneSiC Semiconductor

Número de pieza	GBL04
Estado de la pieza	Active
Tipo de diodo	Single Phase
Tecnología	Standard
Voltaje - Pico Inverso (Máx)	400V
Corriente - promedio rectificado (Io)	4A
Voltaje - Adelante (Vf) (Máx) @ Si	1.1V @ 4A
Current - Reverse Leakage @ Vr	5µA @ 400V
Temperatura de funcionamiento	-55°C ~ 150°C (TJ)
Tipo de montaje	Through Hole
Paquete / caja	4-SIP, GBL
Paquete de dispositivo del proveedor	GBL
Peso	-
País de origen	-

Número de pieza	Fabricantes	Descripción	Ver
GB-15000-44	ORIGINAL	GB-15000-44 ORIGINAL SMD or Through Hole New Original Stocks	Detalles
GB-IR333A21BT	EXSHINE	high power solution infrared emitting diodes	Detalles
GB-IR333A21C	EXSHINE	high power solution infrared emitting diodes	Detalles
GB-IR333A31BT	EXSHINE	high power solution infrared emitting diodes	Detalles
GB-IR333A31C	EXSHINE	high power solution infrared emitting diodes	Detalles
GB-IR333A51BT	EXSHINE	high power solution infrared emitting diodes	Detalles
GB-IR333A51C	EXSHINE	high power solution infrared emitting diodes	Detalles
GB-IR333B21BT	EXSHINE	high power solution infrared emitting diodes	Detalles
GB-IR333B21C	EXSHINE	high power solution infrared emitting diodes	Detalles
GB-IR333B31BT	EXSHINE	high power solution infrared emitting diodes	Detalles