S1MSWFQ-7 - Diodes Incorporated

Número de pieza	S1MSWFQ-7
Estado de la pieza	Active
Tipo de diodo	Standard
Voltaje - DC Reverse (Vr) (Max)	1000V
Corriente - promedio rectificado (Io)	1A
Voltaje - Adelante (Vf) (Máx) @ Si	1.1V @ 1A
Velocidad	Standard Recovery >500ns, > 200mA (Io)
Tiempo de recuperación inversa (trr)	1µs
Current - Reverse Leakage @ Vr	10µA @ 1000V
Capacitancia @ Vr, F	6pF @ 4V, 1MHz
Tipo de montaje	Surface Mount
Paquete / caja	SOD-123F
Paquete de dispositivo del proveedor	SOD-123F
Temperatura de funcionamiento - unión	-55°C ~ 150°C
Peso	-
País de origen	-

Número de pieza	Fabricantes	Descripción	Ver
S1M	Fairchild/ON Semiconductor	DIODE GEN PURP 1KV 1A SMA	Detalles
S1M M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A DO214AC	Detalles
S1M R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A DO214AC	Detalles
S1M-13	Diodes Incorporated	DIODE GEN PURP 1KV 1A SMA	Detalles
S1M-13-F	Diodes Incorporated	DIODE GEN PURP 1KV 1A SMA	Detalles
S1M-26R2	Taiwan Semiconductor Corporation	GLASS PASSIVATED SMD RECTIFIER	Detalles
S1M-26R2G	Taiwan Semiconductor Corporation	GLASS PASSIVATED SMD RECTIFIER	Detalles
S1M-26R3	Taiwan Semiconductor Corporation	GLASS PASSIVATED SMD RECTIFIER	Detalles
S1M-26R3G	Taiwan Semiconductor Corporation	GLASS PASSIVATED SMD RECTIFIER	Detalles
S1M-E3/13T	VISHAY	S1M-E3/13T VISHAY SMA New Original Stocks	Detalles