SB3100E-G - Comchip Technology

Número de pieza	SB3100E-G
Estado de la pieza	Active
Tipo de diodo	Schottky
Voltaje - DC Reverse (Vr) (Max)	100V
Corriente - promedio rectificado (Io)	3A
Voltaje - Adelante (Vf) (Máx) @ Si	850mV @ 3A
Velocidad	Fast Recovery =< 500ns, > 200mA (Io)
Tiempo de recuperación inversa (trr)	-
Current - Reverse Leakage @ Vr	500µA @ 100V
Capacitancia @ Vr, F	250pF @ 4V, 1MHz
Tipo de montaje	Through Hole
Paquete / caja	DO-201AD, Axial
Paquete de dispositivo del proveedor	DO-201AD
Temperatura de funcionamiento - unión	-65°C ~ 150°C
Peso	-
País de origen	-

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SB30-100MA	SEME-LAB	DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI-REL APPLICATIONS	Detalles
SB30-100MSMD	SEME-LAB	DUAL SCHOTTKY BARRIER DIODE IN FOR HI-REL APPLICATIONS	Detalles
SB30-100RM	SEME-LAB	DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI-REL APPLICATIONS	Detalles
SB30-100RSMD	SEME-LAB	DUAL SCHOTTKY BARRIER DIODE IN FOR HI-REL APPLICATIONS	Detalles
SB30-40-258AM	SEME-LAB	DUAL SCHOTTKY BARRIER DIODE IN TO258 METAL PACKAGE FOR HI-REL APPLICATIONS	Detalles
SB30-40-258M	SEME-LAB	DUAL SCHOTTKY BARRIER DIODE IN TO258 METAL PACKAGE FOR HI-REL APPLICATIONS	Detalles