BYV10-600PQ - WeEn Semiconductors

Part Number	BYV10-600PQ
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	10A
Voltage - Forward (Vf) (Max) @ If	2V @ 10A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	50ns
Current - Reverse Leakage @ Vr	10µA @ 600V
Capacitance @ Vr, F	-
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220AC
Operating Temperature - Junction	175°C (Max)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
BYV10-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 10A TO220AC	Details
BYV10ED-600PJ	WeEn Semiconductors	BYV10ED-600P/DPAK/REEL 13" Q1/	Details
BYV10EX-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 10A TO220F	Details
BYV10X-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 10A TO220-2	Details
BYV116B-25	PHI	BYV116B-25 PHI TO-263 New Original Stocks	Details
BYV118-40	PHI	BYV118-40 PHI TO-220 New Original Stocks	Details
BYV12	VISHAY	Fast Silicon Mesa Rectifiers	Details
BYV12-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 100V 1.5A SOD57	Details
BYV12-TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 100V 1.5A SOD57	Details
BYV13	VISHAY	Fast Silicon Mesa Rectifiers	Details