BYC30-1200PQ - WeEn Semiconductors

Part Number	BYC30-1200PQ
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	1200V
Current - Average Rectified (Io)	30A
Voltage - Forward (Vf) (Max) @ If	3.3V @ 30A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	65ns
Current - Reverse Leakage @ Vr	250µA @ 1200V
Capacitance @ Vr, F	-
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220AC
Operating Temperature - Junction	175°C (Max)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
BYC30-1200PQ	WeEn Semiconductors	DIODE GEN PURP 1.2KV 30A TO220AC	Details
BYC30-600P,127	WeEn Semiconductors	BYC30-600P/TO-220AC/STANDARD M	Details
BYC30B-600PJ	WeEn Semiconductors	DIODE GEN PURP 600V 30A D2PAK	Details
BYC30DW-600PQ	WeEn Semiconductors	BYC30DW-600PQ/TO247/STANDARD MAR	Details
BYC30W-1200PQ	WeEn Semiconductors	DIODE GEN PURP 1.2KV 30A TO247-2	Details
BYC30W-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 30A TO247-2	Details
BYC30W-600PT2Q	WeEn Semiconductors	BYC30W-600PT2Q/TO247/STANDARD MA	Details
BYC30WT-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 30A TO247-3	Details
BYC30X-600P,127	WeEn Semiconductors	DIODE GEN PURP 600V 30A TO220F	Details