VS-GBPC3512W - Vishay Semiconductor Diodes Division

Part Number	VS-GBPC3512W
Part Status	Active
Diode Type	Single Phase
Technology	Standard
Voltage - Peak Reverse (Max)	1200V
Current - Average Rectified (Io)	35A
Voltage - Forward (Vf) (Max) @ If	-
Current - Reverse Leakage @ Vr	2mA @ 1200V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	4-Square, GBPC-W
Supplier Device Package	GBPC-W
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
VS-GA100NA60UP	Vishay Semiconductor Diodes Division	IGBT 600V 100A 250W SOT-227	Details
VS-GA100TS120UPBF	Vishay Semiconductor Diodes Division	IGBT 1200V 182A 520W INT-A-PAK	Details
VS-GA100TS60SF	Vishay Semiconductor Diodes Division	IGBT 600V 220A 780W	Details
VS-GA100TS60SFPBF	Vishay Semiconductor Diodes Division	IGBT 600V 220A 780W INT-A-PAK	Details
VS-GA200HS60S1	Vishay Semiconductor Diodes Division	IGBT 600V 480A 830W	Details
VS-GA200HS60S1PBF	Vishay Semiconductor Diodes Division	IGBT 600V 480A 830W INT-A-PAK	Details
VS-GA200SA60SP	Vishay Semiconductor Diodes Division	MODULE IGBT SOT-227	Details
VS-GA200SA60UP	Vishay Semiconductor Diodes Division	IGBT 600V 200A 500W SOT-227	Details
VS-GA200TH60S	Vishay Semiconductor Diodes Division	IGBT 600V 260A 1042W INT-A-PAK	Details
VS-GA250SA60S	Vishay Semiconductor Diodes Division	IGBT 600V 400A SOT227	Details