SUD35N10-26P-T4GE3 - Vishay Siliconix

Part Number	SUD35N10-26P-T4GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	7V, 10V
Vgs(th) (Max) @ Id	4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 12V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	8.3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs	26 mOhm @ 12A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252, (D-Pak)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SUD35N05-26L	VISHAY	SUD35N05-26L VISHAY DPAK(T.. New Original Stocks	Details
SUD35N05-26L-E3	Vishay Siliconix	MOSFET N-CH 55V 35A TO252	Details
SUD35N10-26P	VISHAY	N-Channel 100-V (D-S) MOSFET	Details
SUD35N10-26P-E3	Vishay Siliconix	MOSFET N-CH 100V 35A TO252	Details
SUD35N10-26P-GE3	Vishay Siliconix	MOSFET N-CH 100V 35A DPAK	Details
SUD35N10-26P-T4GE3	Vishay Siliconix	MOSFET N-CH 100V 35A TO252	Details