SQM30010EL_GE3 - Vishay Siliconix

Part Number	SQM30010EL_GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.35 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	450nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	28000pF @ 15V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D²Pak)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SQM30010EL_GE3	Vishay Siliconix	MOSFET N-CH 30V D2PAK TO-263	Details
SQM300JB-0R1	Yageo	RES WW 3W 5 TH	Details
SQM300JB-0R11	Yageo	RES WW 3W 5 TH	Details
SQM300JB-0R12	Yageo	RES WW 3W 5 TH	Details
SQM300JB-0R13	Yageo	RES WW 3W 5 TH	Details
SQM300JB-0R15	Yageo	RES WW 3W 5 TH	Details
SQM300JB-0R16	Yageo	RES WW 3W 5 TH	Details
SQM300JB-0R18	Yageo	RES WW 3W 5 TH	Details
SQM300JB-0R2	Yageo	RES WW 3W 5 TH	Details
SQM300JB-0R22	Yageo	RES WW 3W 5 TH	Details