SQD45P03-12_GE3 - Vishay Siliconix

Part Number	SQD45P03-12_GE3
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	83nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3495pF @ 15V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	71W (Tc)
Rds On (Max) @ Id, Vgs	10 mOhm @ 15A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SQD45N05-20L-GE3	Vishay Siliconix	MOSFET N-CH 50V 50A TO252	Details
SQD45P03-12-GE3	VIS	SQD45P03-12-GE3 VIS TO-252 New Original Stocks	Details
SQD45P03-12_GE3	Vishay Siliconix	MOSFET P-CH 30V 50A TO252	Details