SQD35N05-26L-GE3

SQD35N05-26L-GE3 - Vishay Siliconix

Part Number
SQD35N05-26L-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 55V 30A TO252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SQD35N05-26L-GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4392 pcs
Reference Price
USD 0/pcs
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SQD35N05-26L-GE3 Detailed Description

Part Number SQD35N05-26L-GE3
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 1175pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Rds On (Max) @ Id, Vgs 20 mOhm @ 20A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight -
Country of Origin -

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