SQD10N30-330H_GE3

SQD10N30-330H_GE3 - Vishay Siliconix

Part Number
SQD10N30-330H_GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 300V 10A TO252AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SQD10N30-330H_GE3 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
222740 pcs
Reference Price
USD 0.7392/pcs
Our Price
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SQD10N30-330H_GE3 Detailed Description

Part Number SQD10N30-330H_GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 330 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2190pF @ 25V
FET Feature -
Power Dissipation (Max) 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight -
Country of Origin -

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