SQ2301ES-T1_GE3 - Vishay Siliconix

Part Number	SQ2301ES-T1_GE3
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.9A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	2.5V, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	425pF @ 10V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Rds On (Max) @ Id, Vgs	120 mOhm @ 2.8A, 4.5V
Operating Temperature	-55°C ~ 175°C (TA)
Mounting Type	Surface Mount
Supplier Device Package	TO-236 (SOT-23)
Package / Case	TO-236-3, SC-59, SOT-23-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SQ2301ES-T1-GE3	VIS	SQ2301ES-T1-GE3 VIS SOT-23 New Original Stocks	Details
SQ2301ES-T1_GE3	Vishay Siliconix	MOSFET P-CH 20V 3.9A SOT23-3	Details
SQ2303ES-T1-GE3	VIS	SQ2303ES-T1-GE3 VIS SOT-23 New Original Stocks	Details
SQ2303ES-T1_GE3	Vishay Siliconix	MOSFET P-CHAN 30V SOT23	Details
SQ2303P12NF	Laird Technologies IAS	ANT OMNI SQUINT PNL N FEMALE	Details
SQ2303P36RSM	Laird Technologies IAS	ANT OMNI SQUINT PNL RP SMA	Details
SQ2303P36RTN	Laird Technologies IAS	ANT OMNI SQUINT PNL RP TNC	Details
SQ2303P72RTN	Laird Technologies IAS	ANT OMNI SQUINT PNL RP TNC	Details
SQ2303PNF	Laird Technologies IAS	ANT OMNI SQUINT PNL N FEMALE	Details
SQ2308CES-T1_GE3	Vishay Siliconix	MOSFET N-CH 60V 2.3A	Details