SIRA66DP-T1-GE3

SIRA66DP-T1-GE3 - Vishay Siliconix

Part Number
SIRA66DP-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 30V 50A POWERPAKSO-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SIRA66DP-T1-GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
354132 pcs
Reference Price
USD 0.46494/pcs
Our Price
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SIRA66DP-T1-GE3 Detailed Description

Part Number SIRA66DP-T1-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.3 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Weight -
Country of Origin -

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