SIR800DP-T1-GE3

SIR800DP-T1-GE3 - Vishay Siliconix

Part Number
SIR800DP-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 20V 50A PPAK SO-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SIR800DP-T1-GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
32631 pcs
Reference Price
USD 0.7826/pcs
Our Price
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SIR800DP-T1-GE3 Detailed Description

Part Number SIR800DP-T1-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 133nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5125pF @ 10V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 5.2W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs 2.3 mOhm @ 15A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Weight -
Country of Origin -

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