SIHD6N65ET5-GE3 Detailed Description
| Part Number |
SIHD6N65ET5-GE3 |
| Part Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
650V |
| Current - Continuous Drain (Id) @ 25°C |
7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
600 mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
| Vgs (Max) |
±30V |
| Input Capacitance (Ciss) (Max) @ Vds |
820pF @ 100V |
| FET Feature |
- |
| Power Dissipation (Max) |
78W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
TO-252AA |
| Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Weight |
- |
| Country of Origin |
- |
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