SIHB33N60ET5-GE3

SIHB33N60ET5-GE3 - Vishay Siliconix

Part Number
SIHB33N60ET5-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 600V 33A TO263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SIHB33N60ET5-GE3 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
45357 pcs
Reference Price
USD 3.63/pcs
Our Price
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SIHB33N60ET5-GE3 Detailed Description

Part Number SIHB33N60ET5-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99 mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3508pF @ 100V
FET Feature -
Power Dissipation (Max) 278W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight -
Country of Origin -

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