| Part Number | SIE816DF-T1-E3 |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 77nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100pF @ 30V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Rds On (Max) @ Id, Vgs | 7.4 mOhm @ 19.8A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 10-PolarPAK® (L) |
| Package / Case | 10-PolarPAK® (L) |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
SIE810DF | VISHAY | N-Channel 20-V (D-S) MOSFET | Details |
|
SIE810DF-T1-E3 | Vishay Siliconix | MOSFET N-CH 20V 60A 10-POLARPAK | Details |
|
SIE810DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 60A POLARPAK | Details |
|
SIE812DF | VISHAY | N-Channel 40-V (D-S) MOSFET | Details |
|
SIE812DF-T1-E3 | Vishay Siliconix | MOSFET N-CH 40V 60A 10-POLARPAK | Details |
|
SIE812DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH 40V 60A POLARPAK | Details |
|
SIE816DF-T1-E3 | Vishay Siliconix | MOSFET N-CH 60V 60A POLARPAK | Details |
|
SIE816DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 60A POLARPAK | Details |
|
SIE818DF-T1-E3 | Vishay Siliconix | MOSFET N-CH 75V 60A 10-POLARPAK | Details |
|
SIE818DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH 75V 60A POLARPAK | Details |
