SIB900EDK-T1-GE3

SIB900EDK-T1-GE3 - Vishay Siliconix

Part Number
SIB900EDK-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET 2N-CH 20V 1.5A SC-75-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SIB900EDK-T1-GE3 PDF online browsing
Datasheet PDF Download
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Category
Transistors - FETs, MOSFETs - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
121949 pcs
Reference Price
USD 0.2131/pcs
Our Price
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SIB900EDK-T1-GE3 Detailed Description

Part Number SIB900EDK-T1-GE3
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.5A
Rds On (Max) @ Id, Vgs 225 mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SC-75-6L Dual
Supplier Device Package PowerPAK® SC-75-6L Dual
Weight -
Country of Origin -

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