SI8823EDB-T2-E1 Detailed Description
Part Number |
SI8823EDB-T2-E1 |
Part Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
2.7A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) |
1.5V, 4.5V |
Vgs(th) (Max) @ Id |
800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
10nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds |
580pF @ 10V |
Vgs (Max) |
±8V |
FET Feature |
- |
Power Dissipation (Max) |
900mW (Tc) |
Rds On (Max) @ Id, Vgs |
95 mOhm @ 1A, 4.5V |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
4-MICRO FOOT® (0.8x0.8) |
Package / Case |
4-XFBGA |
Weight |
- |
Country of Origin |
- |
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