SI8487DB-T1-E1

SI8487DB-T1-E1 - Vishay Siliconix

Part Number
SI8487DB-T1-E1
Manufacturer
Vishay Siliconix
Brief Description
MOSFET P-CH 30V MICROFOOT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SI8487DB-T1-E1 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
102508 pcs
Reference Price
USD 0.2541/pcs
Our Price
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SI8487DB-T1-E1 Detailed Description

Part Number SI8487DB-T1-E1
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 10V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2240pF @ 15V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 1.1W (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs 31 mOhm @ 2A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-Microfoot
Package / Case 4-UFBGA
Weight -
Country of Origin -

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