SI8487DB-T1-E1 Detailed Description
Part Number |
SI8487DB-T1-E1 |
Part Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30V |
Current - Continuous Drain (Id) @ 25°C |
- |
Drive Voltage (Max Rds On,Min Rds On) |
2.5V, 10V |
Vgs(th) (Max) @ Id |
1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
80nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
2240pF @ 15V |
Vgs (Max) |
±12V |
FET Feature |
- |
Power Dissipation (Max) |
1.1W (Ta), 2.7W (Tc) |
Rds On (Max) @ Id, Vgs |
31 mOhm @ 2A, 10V |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
4-Microfoot |
Package / Case |
4-UFBGA |
Weight |
- |
Country of Origin |
- |
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