Part Number | SI8424CDB-T1-E1 |
---|---|
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On,Min Rds On) | 1.2V, 4.5V |
Vgs(th) (Max) @ Id | 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 2340pF @ 4V |
Vgs (Max) | ±5V |
FET Feature | - |
Power Dissipation (Max) | 1.1W (Ta), 2.7W (Tc) |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 2A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-Microfoot |
Package / Case | 4-UFBGA, WLCSP |
Weight | - |
Country of Origin | - |