Part Number | SI8417DB-T2-E1 |
---|---|
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 14.5A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 57nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 2220pF @ 6V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 2.9W (Ta), 6.57W (Tc) |
Rds On (Max) @ Id, Vgs | 21 mOhm @ 1A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-Micro Foot™ |
Package / Case | 6-MICRO FOOT™ |
Weight | - |
Country of Origin | - |