SI8417DB-T2-E1

SI8417DB-T2-E1 - Vishay Siliconix

Part Number
SI8417DB-T2-E1
Manufacturer
Vishay Siliconix
Brief Description
MOSFET P-CH 12V 14.5A 2X2 6MFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SI8417DB-T2-E1 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3652 pcs
Reference Price
USD 0/pcs
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SI8417DB-T2-E1 Detailed Description

Part Number SI8417DB-T2-E1
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 14.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 1.8V, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 2220pF @ 6V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 2.9W (Ta), 6.57W (Tc)
Rds On (Max) @ Id, Vgs 21 mOhm @ 1A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-Micro Foot™
Package / Case 6-MICRO FOOT™
Weight -
Country of Origin -

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