SI8416DB-T1-GE3

SI8416DB-T1-GE3 - Vishay Siliconix

Part Number
SI8416DB-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 8V 16A MICRO
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SI8416DB-T1-GE3 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4170 pcs
Reference Price
USD 0/pcs
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SI8416DB-T1-GE3 Detailed Description

Part Number SI8416DB-T1-GE3
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 1.2V, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 4V
Vgs (Max) ±5V
FET Feature -
Power Dissipation (Max) 2.77W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs 23 mOhm @ 1.5A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-microfoot
Package / Case 6-UFBGA
Weight -
Country of Origin -

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