SI7960DP-T1-GE3 Detailed Description
| Part Number |
SI7960DP-T1-GE3 |
| Part Status |
Obsolete |
| FET Type |
2 N-Channel (Dual) |
| FET Feature |
Logic Level Gate |
| Drain to Source Voltage (Vdss) |
60V |
| Current - Continuous Drain (Id) @ 25°C |
6.2A |
| Rds On (Max) @ Id, Vgs |
21 mOhm @ 9.7A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
75nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
- |
| Power - Max |
1.4W |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerPAK® SO-8 Dual |
| Supplier Device Package |
PowerPAK® SO-8 Dual |
| Weight |
- |
| Country of Origin |
- |
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