SI7886ADP-T1-GE3 Detailed Description
Part Number |
SI7886ADP-T1-GE3 |
Part Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30V |
Current - Continuous Drain (Id) @ 25°C |
15A (Ta) |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V, 10V |
Vgs(th) (Max) @ Id |
1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
60nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds |
6450pF @ 15V |
Vgs (Max) |
±12V |
FET Feature |
- |
Power Dissipation (Max) |
1.9W (Ta) |
Rds On (Max) @ Id, Vgs |
4 mOhm @ 25A, 10V |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PowerPAK® SO-8 |
Package / Case |
PowerPAK® SO-8 |
Weight |
- |
Country of Origin |
- |
RELATED PRODUCTS FOR SI7886ADP-T1-GE3