| Part Number | SI7852DP-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Rds On (Max) @ Id, Vgs | 16.5 mOhm @ 10A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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SI7850ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V POWERPAK SO-8 | Details |
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SI7850DP | VISHAY | SI7850DP VISHAY QFN8 New Original Stocks | Details |
|
SI7850DP-T1-E3 | Vishay Siliconix | MOSFET N-CH 60V 6.2A PPAK SO-8 | Details |
|
SI7850DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 6.2A PPAK SO-8 | Details |
|
SI7852ADP-T1-E3 | Vishay Siliconix | MOSFET N-CH 80V 30A PPAK SO-8 | Details |
|
SI7852ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 80V 30A PPAK SO-8 | Details |
|
SI7852DP | VISHAY | N-Channel 80-V (D-S) MOSFET | Details |
|
SI7852DP-T1-E3 | Vishay Siliconix | MOSFET N-CH 80V 7.6A PPAK SO-8 | Details |
|
SI7852DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 80V 7.6A PPAK SO-8 | Details |
|
SI7856ADP | VIS | SI7856ADP VIS QFN8 New Original Stocks | Details |
