SI7810DN-T1-E3 Detailed Description
| Part Number |
SI7810DN-T1-E3 |
| Part Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
100V |
| Current - Continuous Drain (Id) @ 25°C |
3.4A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) |
6V, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
- |
| Vgs (Max) |
±20V |
| FET Feature |
- |
| Power Dissipation (Max) |
1.5W (Ta) |
| Rds On (Max) @ Id, Vgs |
62 mOhm @ 5.4A, 10V |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
PowerPAK® 1212-8 |
| Package / Case |
PowerPAK® 1212-8 |
| Weight |
- |
| Country of Origin |
- |
RELATED PRODUCTS FOR SI7810DN-T1-E3
