SI7792DP-T1-GE3 - Vishay Siliconix

Part Number	SI7792DP-T1-GE3
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	40.6A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.1 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	135nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4.735nF @ 15V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SI7790DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 50A PPAK SO-8	Details
SI7792DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V P-PACK SO-8	Details
SI7794DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V P-PACK SO-8	Details