| Part Number | SI7431DP-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 135nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Rds On (Max) @ Id, Vgs | 174 mOhm @ 3.8A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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SI7430DP-T1-E3 | Vishay Siliconix | MOSFET N-CH 150V 26A PPAK SO-8 | Details |
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SI7430DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 150V 26A PPAK SO-8 | Details |
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SI7431DP-T1-E3 | Vishay Siliconix | MOSFET P-CH 200V 2.2A PPAK SO-8 | Details |
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SI7431DP-T1-GE3 | Vishay Siliconix | MOSFET P-CH 200V 2.2A PPAK SO-8 | Details |
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SI7431DY-T1-E3 | VISHAY | SI7431DY-T1-E3 VISHAY SOP8 New Original Stocks | Details |
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SI7434ADP-T1-RE3 | Vishay Siliconix | MOSFET N-CHAN 250V POWERPAK SO-8 | Details |
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SI7434DP | VISHAY | N-CHANNEL 250-V (D-S) MOSFET | Details |
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SI7434DP-T1-E3 | Vishay Siliconix | MOSFET N-CH 250V 2.3A PPAK SO-8 | Details |
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SI7434DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 250V 2.3A PPAK SO-8 | Details |
