SI7407DN-T1-E3

SI7407DN-T1-E3 - Vishay Siliconix

Part Number
SI7407DN-T1-E3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET P-CH 12V 9.9A PPAK 1212-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SI7407DN-T1-E3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3632 pcs
Reference Price
USD 0/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for SI7407DN-T1-E3

SI7407DN-T1-E3 Detailed Description

Part Number SI7407DN-T1-E3
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 9.9A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 1.8V, 4.5V
Vgs(th) (Max) @ Id 1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs 59nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Rds On (Max) @ Id, Vgs 12 mOhm @ 15.6A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Weight -
Country of Origin -

RELATED PRODUCTS FOR SI7407DN-T1-E3