SI7252DP-T1-GE3

SI7252DP-T1-GE3 - Vishay Siliconix

Part Number
SI7252DP-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET 2N-CH 100V 36.7A PPAK 8SO
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SI7252DP-T1-GE3 PDF online browsing
Datasheet PDF Download
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Category
Transistors - FETs, MOSFETs - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
25586 pcs
Reference Price
USD 1.0395/pcs
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SI7252DP-T1-GE3 Detailed Description

Part Number SI7252DP-T1-GE3
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 36.7A
Rds On (Max) @ Id, Vgs 18 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1170pF @ 50V
Power - Max 46W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
Weight -
Country of Origin -

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