SI6463BDQ-T1-GE3 Detailed Description
| Part Number |
SI6463BDQ-T1-GE3 |
| Part Status |
Obsolete |
| FET Type |
P-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
20V |
| Current - Continuous Drain (Id) @ 25°C |
6.2A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) |
1.8V, 4.5V |
| Vgs(th) (Max) @ Id |
800mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds |
- |
| Vgs (Max) |
±8V |
| FET Feature |
- |
| Power Dissipation (Max) |
1.05W (Ta) |
| Rds On (Max) @ Id, Vgs |
15 mOhm @ 7.4A, 4.5V |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
8-TSSOP |
| Package / Case |
8-TSSOP (0.173", 4.40mm Width) |
| Weight |
- |
| Country of Origin |
- |
RELATED PRODUCTS FOR SI6463BDQ-T1-GE3
