| Part Number | SI6463BDQ-T1-E3 |
|---|---|
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 1.05W (Ta) |
| Rds On (Max) @ Id, Vgs | 15 mOhm @ 7.4A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSSOP |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
SI6463ADQ-T1 | SIL | SI6463ADQ-T1 SIL MSOP-8 New Original Stocks | Details |
|
SI6463ADQ-T1-E3 | VISHAY | SI6463ADQ-T1-E3 VISHAY TSSOP-.. New Original Stocks | Details |
|
SI6463BDQ | VIS | SI6463BDQ VIS TSSOP8 New Original Stocks | Details |
|
SI6463BDQ-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 6.2A 8-TSSOP | Details |
|
SI6463BDQ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 6.2A 8-TSSOP | Details |
|
SI6463DQ-T1 | SILICONIX | SI6463DQ-T1 SILICONIX SOP8 New Original Stocks | Details |
|
SI6463DQ-T1-E3 | VISHAY | SI6463DQ-T1-E3 VISHAY MSOP-8 New Original Stocks | Details |
|
SI6465DQ-T1-E3 | Vishay Siliconix | MOSFET P-CH 8V 8.8A 8TSSOP | Details |
|
SI6465DQ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V 8.8A 8TSSOP | Details |
|
SI6466ADQ | VISHAY | N-Channel 2.5-V (G-S) MOSFET | Details |
