Part Number | SI6435ADQ-T1-E3 |
---|---|
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4.7A (Ta) |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.05W (Ta) |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 5.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSSOP |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Weight | - |
Country of Origin | - |